|
NUMBER
|
TITLE
|
|
TR-92-001
|
Evolution and Status of Smart Power Technology
|
|
TR-92-002
|
Power Semiconductor Devices for the 1990s
|
|
TR-92-003
|
Impact of SiC on Power Devices
|
|
TR-92-004
|
Comparison of 6H-SiC, 3C-SiC, and Si for Power Devices
|
|
TR-92-005
|
Power MOSFET Analysis and Optimization for Cryogenic Operation
|
|
TR-92-006
|
The Accumulation Mode Field Effect Transistor
|
|
TR-92-007
|
Fast Switching Power MOS-Gated EST and BRT Thyristors
|
|
TR-92-008
|
An Extended Trench Gate Power MOSFET Structure
|
|
TR-92-009
|
Cryogenic Operation of Asymmetric n-Channel IGBTs
|
|
TR-92-010
|
Comparison of DI and JI Lateral IGBTs
|
|
TR-92-011
|
The Minority Carrier Injection Controlled Field-Effect
Transistor (MICFET) - A New MOS-Gated Power Transistor Structure
|
|
TR-92-012
|
Silicon Carbide High Voltage (400V)
Schottky
|
|
NUMBER
|
TITLE
|
|
TR-92-013
|
Lateral Junction Isolated Emitter Switched Thyristor
|
|
TR-92-014
|
Mobility Study on RIE Etched Silicon Surfaces Using SF6/O2
Gas Etchants
|
|
TR-92-015
|
Comparison of Ultralow Specific On-Resistance UMOSFET
Structures: The ACCUFET,
EXTFET, INVFET, and Conventional UMOSFETs
|
|
TR-92-016
|
Characterization of Thermal Oxides Grown on Trench Structures
|
|
TR-92-017
|
Trench-Gate Base-Resistance-Controlled Thyristors (UMOS-BRTs)
|
|
TR-92-018
|
Dielectrically Isolated Lateral Emitter Switched Thyristor
|
|
TR-92-019
|
Dielectrically Isolated Lateral High Voltage P-i-N Rectifiers
for Power ICs
|
|
TR-92-020
|
Comparison of Ti and Pt Silicon carbide Schottky Rectifiers
|
|
TR-92-021
|
Abstracts of Papers Submitted to ISPSD'93
|
|
TR-92-022
|
Analysis and Optimization of Power MOSFETs for Cryogenic
Operation
|
|
TR-92-023
|
An Emitter Switched Thyristor with Base Resistance Control
|
|
TR-92-024
|
Reactive Ion Etching of 3C-Monocrystalline Silicon Carbide
|
|
TR-93-001
|
Emitter Ballasting Effects in the Base Resistance Controlled
Thyristor
|
|
TR-93-002
|
A Study of ESTs Short-Circuit SOA
|
|
TR-93-003
|
Cryogenic Operation of P-i-N Power Rectifiers
|
|
TR-93-004
|
Comparison of High Voltage Power Rectifier Structures
|
|
TR-93-005
|
Junction and Dielectrically Isolated Lateral ESTs for Power ICs
|
|
TR-93-006
|
Large Area MOS-Gated Power Devices Using Fusible Link Technology
|
|
TR-93-007
|
Edge Terminations for SiC Voltage Schottky Rectifiers
|
|
TR-93-008
|
Very low forward drop JBS Rectifiers Fabricated using Submicron
Technology
|
|
TR-93-009
|
Modeling the On-state Characteristics of the Emitter Switched
Thyristor
|
|
TR-93-010
|
Cryogenic Operation of Asymmetric n-channel IGBTs
|
|
TR-93-011
|
Modelling the Turn-Off Characteristics of the Base Resistance
Controlled Thyristor (BRT)
|
|
TR-93-012
|
Electron Irradiation of Emitter Switched Thyristors
|
|
TR-93-013
|
Temperature Dependence of the
Emitter Switched Thyristor Characteristics
|
|
NUMBER
|
TITLE
|
|
TR-93-014
|
Abstracts Submitted to IEDM'93
|
|
TR-93-015
|
Trench MPS Rectifiers
|
|
TR-93-016
|
Cryogenic Operation of P-I-N Power Rectifiers
|
|
TR-93-017
|
Forward Biased Safe Operating Area of Emitter Switched
Thyristors
|
|
TR-93-018
|
Low Forward Drop JBS Rectifiers Fabricated Using Submicron
Technology
|
|
TR-93-019
|
Low Specific Resistivity Ohmic Contacts to 6H-Silicon Carbide
|
|
TR-93-020
|
The Trench MOS Barrier Schottky (TMBS) Rectifier
|
|
TR-93-021
|
High Temperature Performance of Dielectrically Isolated
LDMOSFET, LIGBT and LEST
|
|
TR-93-022
|
3C-Monocrystalline SiC Reactive Ion Etching Using SF6/02
|
|
TR-93-023
|
SiC Power UMOSFET; Design, Analysis, and Technological
Feasibility
|
|
TR-93-024
|
Abstracts Submitted to ISPSD'94
|
|
TR-93-025
|
Electrical Properties of Thermal Oxide Grown on N-Type
6H-Silicon Carbide
|
|
TR-93-026
|
Power Semiconductor Devices for Variable Frequency Drives
|
|
TR-94-001
|
High Voltage SiC Schottky Rectifiers
|
|
TR-94-002
|
RESP Termination for High-Voltage 6H-SiC Schottky Rectifiers
|
|
TR-94-003
|
Effect of Surface Inhomogenities on the Electrical
Characteristics of SiC Schottky Contacts
|
|
TR-94-004
|
Thermal Oxidation of 6H-Silicon Carbide at Enhanced Growth Rates
|
|
TR-94-005
|
High Temperature Performance of Dielectrically Isolated
LDMOSFET:
Characterization, Simulation and Analysis
|
|
TR-94-006
|
A Comparison of High Frequency Cell Designs for High Voltage
DMOSFETs
|
|
TR-94-007
|
A New IGBT Structure with a Wider Safe Operating Area (SOA)
|
|
TR-94-008
|
Comparison of RBSOA of ESTs with IGBTs and MCTs
|
|
TR-94-009
|
Cryogenic Operation of Power Bipolar Transistors
|
|
TR-94-010
|
Cryogenic Operation of Asymmetric Field Control Thyristors
|
|
TR-94-011
|
Electrical Properties of Thermal Oxide Grown on P-Type 6H-
Silicon Carbide
|
|
TR-94-012
|
A Simple Edge Termination for Silicon Carbide Devices with
Nearly Ideal Breakdown Voltage
|
|
TR-94-013
|
Large Area MOS-Gated Power Devices Using High-Current Fusible
Links
|
|
TR-94-014
|
Large Area MOS-Gated Power Devices
Using Fusible Link Technology
|
|
NUMBER
|
TITLE
|
|
TR-94-015
|
The Trench MOS Barrier Schottky (TMBS) Rectifier: A Schottky Rectifier with High
than Parallel Plane Breakdown Voltage
|
|
TR-94-016
|
Yield Loss Mechanisms in MOS-Gated Power Devices
|
|
TR-94-017
|
Design Optimization of Large Area MOS-Gated Power Devices Using
Wager Repair Techniques
|
|
TR-94-018
|
Optimization of RESURF Effect in DI Lateral IGBT
|
|
TR-94-019
|
Low Resistivity As-Deposited Ohmic Contacts to 3C-SiC
|
|
TR-94-020
|
A Novel Method for Etching Trenches in Silicon Carbide
|
|
TR-94-021
|
Cryogenic Operation of Power Bipolar Transistors
|
|
TR-94-022
|
Vertical Schottky Barrier Diodes on 3C-SiC Grown on Si
|
|
TR-94-023
|
Abstracts Submitted to ISPSD'95
|
|
TR-94-024
|
Reverse Biased Safe Operating Area of Emitter Switched
Thyristors
|
|
TR-94-025
|
The Dual Gate Base Resistance Controlled Thyristor
|
|
TR-94-026
|
High Voltage 4H-SiC Schottky Barrier Diodes
|
|
TR-94-027
|
Cryogenic Operation of Asymmetric Field Controlled Thyristors
|
|
TR-95-001
|
Critical Nature of Exide/Interface Quality for SiC Power Devices
|
|
TR-95-002
|
The Dual Channel EST/BRT:
A New High Voltage MOS Gated Thyristor Structure
|
|
TR-95-003
|
A 60 Volt TMBS Rectifier Structure
|
|
TR-95-004
|
An Ultra-Low on-Resistance Trench MOSFET Structure
|
|
TR-95-005
|
Cryogenic Operation of Static Induction (SIT/SITH) Devices
|
|
TR-95-006
|
Comparison of Linear and Circular Cell Dual Channel Emitter
Switched Thyristors
|
|
TR-95-007
|
Integral Diodes In
Lateral DI Power Devices
|
|
TR-95-008
|
The Dual-Gate BRT
|
|
TR-95-009
|
A Planar, Nearly Ideal, SiC Device Edge Termination
|
|
TR-95-010
|
On the Presence of Aluminum in thermally Grown Oxides on
6H-Silicon Carbide
|
|
TR-95-011
|
High Voltage (450V) 6H-SiC Buried Gate FET (BG-FET)
|
|
TR-95-012
|
Argon Implanted SiC Device Edge Termination: Modelling, Analysis and Experimental
Results
|
|
TR-95-013
|
Planar, High Voltage, Ion Implanted 6H-SiC P-N Junction Diodes
|
|
TR-95-014
|
High Quality Oxides on 6H-SiC Silicon Carbide using Rapid
Thermal Chemical Vapor Deposition
|
|
TR-95-015
|
Bringing Intelligent Power Control to the Information Age
|
|
TR-95-016
|
Planar, Ion Implanted, High Voltage 6H-SiC Junction Diodes
|
|
TR-95-017
|
Step Drift Doping Profile for High Voltage DI Lateral Power
Devices
|
|
TR-95-018
|
The Floating Base Thyristor
|
|
TR-95-019
|
Output Characteristics of the Dual Channel EST
|
|
TR-95-020
|
Trench Gate Process Technology
|
|
|
|
