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Patents
The Sponsors are routinely informed of new ideas
developed at PSRC using patent disclosures submitted to Senior Member and
Member level companies. Companies are requested to evaluate the ideas and
approve patent filing in accordance with the membership agreements. Using
this procedure, nearly 50 U.S. Patents have been issued based upon the
work done at PSRC. These patents are listed below with a brief comment on
the technology content.
1. "Integrated
Circuit Power Device with Automatic Removal of Defective Devices and
Method of Fabricating the Same",
Patent
Number: 5,021,861, June 4,
1991.
(First wafer scale defect repair technology for manufacturing
high current devices demonstrated at PSRC/NCSU by using Al fusible links
integrated with MOSFETs and IGBTs)
2. "Gated
Base Controlled Thyristor",
Patent
Number: 5,099,300, March
24, 1992.
(The basic Base Resistance Controlled Thyristor (BRT) structure
and concept demonstrated to be superior to the MCT/MOS-GTO structure at
PSRC/NCSU)
3. "Base
Resistance Controlled Thyristor with Single Polarity Turn-on and Turn-off
Control",
Patent
Number: 5,198,687, March
30, 1993
(Improved Base Resistance Controlled Thyristor (BRT) structure
demonstrated to be superior to the MCT/MOS-GTO structure at PSRC/NCSU)
4. "Silicon
Carbide Power MOSFET with Floating Field Ring and Floating Field
Plate",
Patent
Number: 5,233,215, August
3, 1993
(Basic Trench MOSFET structure with special edge
termination for power switching
applications)
5. "Base
Resistance Controlled Thyristor with Integrated Single Polarity Gate
Control",
Patent
Number: 5,241,194, August
31, 1993.
(Improved Base Resistance Controlled Thyristor (BRT) structure
with buried insulator demonstrated using SIMOX technology to be superior
to the MCT/MOS-GTO concept at PSRC/NCSU)
6. "Merged
PiN/Schottky Power Rectifier having extended PiN Junction",
Patent
Number: 5,241,195, August
31, 1993.
(Improved JBS and MPS structures using P+ regions on trench
sidewalls)
7. "Schottky
Barrier Rectifier including Schottky Barrier Regions of Differing Barrier
Heights",
Patent
Number: 5,262,668,
November 16, 1993.
(SiC Schottky Rectifier with reduced leakage current
without P-implantation. Named
TSBS in PSRC/NCSU papers)
8. "Method
of Forming an Oxide Filled Trench in Silicon Carbide",
Patent
Number: 5,270,244,
December 14, 1993.
(Enhanced Oxidation rate process for SiC, demonstrated
experimentally by PSRC/NCSU)
9. "Emitter
Switched Thyristor without Parasitic Thyristor Latch-up
Susceptibility",
Patent
Number: 5,293,054, March
8, 1994.
(Improved EST structure with MOS-gate controlled current
saturation capability for high voltage applications demonstrated at
PSRC/NCSU)
10. "Unit
Cell Arrangement for Emitter Switched Thyristor with Base Resistance
Control",
Patent
Number: 5,294,816, March
15, 1994.
(Improved EST structure with MOS-gate controlled current
saturation capability for high voltage applications demonstrated at
PSRC/NCSU)
11. "Integrated
Multicelled Semiconductor Switching Device for High Current
Applications",
Patent
Number: 5,296,725, March
22, 1994.
(Improved EST structure with MOS-gate controlled current
saturation capability for high voltage applications demonstrated at
PSRC/NCSU)
12. "Emitter
Switched Thyristor with Buried Dielectric Layer",
Patent
Number: 5,306,930, April
26, 1994.
(Improved selective SIMOX technology based EST structure
with MOS-gate controlled current saturation capability for high voltage
applications demonstrated at PSRC/NCSU)
13. "MOS
Gated Thyristor with Remote Turn-off Electrode",
Patent
Number: 5, 317,171, May
31, 1994.
(Improved EST structure with MOS-gate controlled current
saturation capability for high voltage applications demonstrated at
PSRC/NCSU)
14. "Method
of Forming a P-N Junction in Silicon Carbide",
Patent
Number: 5,318,915, June 7,
1994.
(Enhanced Diffusion rate process for SiC)
15. "MOS
Gated Thyristor having On-State Current Saturation Capability",
Patent
Number: 5,319,222, June 7,
1994.
(Improved EST structure demonstrated at PSRC/NCSU)
16. "Method
of Fabricating Silicon Carbide Field Effect Transistor",
Patent
Number: 5,322,802, June
21, 1994.
(Method for making Planar MOSFET with
displaced P-base and N+ source implants)
17. "Silicon
Carbide Field Effect Device",
Patent
Number: 5,323,040, June
21, 1994.
(Trench Gate ACCUFET structure)
18. "Silicon
Carbide Field Effect Transistor",
Patent
Number: 5,338,945, August
16, 1994.
(Planar MOSFET Structure with displaced P-base and N+
source implants)
19. "Schottky
Barrier Rectifier with MOS Trench",
Patent
Number: 5,365,102,
November 15, 1994.
(Basic TMBS Schottky rectifier structure demonstrated at
PSRC/NCSU)
20. "Integrated
Circuit Power Device with Transient Responsive Current Limiting
means.",
Patent
Number: 5,392,187,
February 21, 1995.
(Second wafer scale defect repair technology for manufacturing
high current devices demonstrated at PSRC/NCSU by using Al fusible links
integrated with MOSFETs and IGBTs)
21. "Silicon
Carbide Switching Device with Rectifying Gate",
Patent
Number: 5,396,085, March
7, 1995.
(The “Baliga-Pair” transistor combination, which combines a low
voltage (preferably Silicon) MOSFET and a high voltage SiC MESFET, to
create an excellent power switch with fly-back rectifier, demonstrated to
have excellent switching losses. The patent also has claims on the
integrated SiC device structure.)
22. "Insulated
Gate Bipolar Transistor with reduced susceptibility to parasitic
latch-up",
Patent
Number: 5,396,087, March
7, 1995.
(Improved elective SIMOX based IGBT structure demonstrated at
PSRC/NCSU)
23. "High
Voltage Silicon Carbide MESFETs and Method of Fabricating Same",
Patent
Number: 5,399,883, March
21, 1995.
(Lateral High Voltage MESFET structure for Power ICs)
24. "Multifunctional
Semiconductor Device having Gate-Controlled Regenerative and
Non-regenerative Conduction Modes, Method of Operating Same",
Patent
Number: 5,412,228, May 2,
1995.
(Monolithic combination of BRT and IGBT to reduce on-state
and switching losses demonstrated at PSRC/NCSU)
25. "Trench
Gate Lateral MOSFET",
Patent
Number: 5,434,435, July
18, 1995.
(High cell density lateral MOSFET structure
for Power ICs)
26. "Method
of forming Trenches in Monocrystalline Silicon Carbide",
Patent
Number: 5,436,174, July
25, 1995.
(Non-RIE process for making trenches,
demonstrated experimentally by PSRC/NCSU)
27. "Integrated
Circuit Power Device with external disabling of Defective Devices and
Method of Fabricating same",
Patent
Number: 5,446,310, August
29, 1995.
(Third wafer scale defect repair technology for manufacturing
high current devices demonstrated at PSRC/NCSU by using Al fusible links
integrated with MOSFETs and IGBTs)
28. "Voltage
Breakdown Resistant Monocrystalline Silicon Carbide Semiconductor
Devices",
Patent
Number: 5,449,925,
September 12, 1995.
(Ion implanted high resistivity layers as
ideal edge terminations for SiC Schottky
Rectifiers, MOSFETs, or other devices
demonstrated at PSRC/NCSU)
29. "Method
of Fabricating High Voltage Silicon Carbide MESFETs",
Patent
Number: 5,459,089, October
17, 1995.
(Method for fabrication of Lateral High Voltage MESFET
structure for Power ICs)
30. "Dual
Channel Emitter Switched Thyristor with Trench Gate",
Patent
Number: 5, 471,075,
November 28, 1995.
(Improved trench gate EST structure with MOS-gate
controlled current saturation capability for high voltage applications)
31. "Latch-up
Resistant Bipolar Transistor with Trench IGFET and Buried
Collector",
Patent
Number: 5,488,236, January
30, 1996.
(Trench gate IGBT with P+ region at trench bottom to
suppress latch-up)
32. "Bidirectional
AC Switching Device with MOS-Gated Turn-on and Turn-off Control",
Patent
Number: 5,493,134,
February 20, 1996.
(Monolithic vertical AC power switch with MOS-gate controlled
current saturation in first and third quadrant for appliance control demonstrated
at PSRC/NCSU)
33. "Silicon
Carbide Semiconductor Devices having Buried Silicon Carbide Conduction
Barrier Layers Therein",
Patent
Number: 5,543,637, August
6, 1996.
(Includes the ACCUFET power MOSFET structure with very low
specific on-
resistance and low electric field in the gate oxide
demonstrated at PSRC/NCSU. Also
covers vertical JFETs and MESFETs with horizontal channel)
34. "Schottky
Barrier Rectifiers and Method of Forming Same",
Patent
Number: 5,612,567, March
18, 1997.
(Graded Doped Trench Schottky rectifier (GD-TMBS) demonstrated at
PSRC/NCSU)
35. "Methods
of Fabricating Voltage Breakdown Resistant Monocrystalline Silicon
Carbide Semiconductor Devices",
Patent
Number: 5,635,412, June 3,
1997.
(Self-Aligned method for fabricating Ion implanted high
resistivity layers as ideal edge terminations demonstrated at PSRC/NCSU)
36. "Vertical
Field Effect Transistors having improved Breakdown Voltage Capability and
Low On-state Resistance",
Patent
Number: 5,637,898, June
10, 1997.
(Graded doped vertical power MOSFET [GD-MOSFET] with gate
electrode in deep trench for charge coupling)
37. "Depleted
Base Transistor with High Forward Voltage Blocking Capability",
Patent
Number: 5,679,966, October
21, 1997.
(Trench gate Accumulation channel silicon bipolar device
with high voltage, high current density capability demonstrated using
planar technology at PSRC/NCSU)
38. "Methods
of Forming Silicon Carbide Semiconductor Devices having Buried Silicon
Carbide Conduction Barrier Layers Therein",
Patent
Number: 5,681,762, October
28, 1997.
(Methods for fabricating the ACCUFET power MOSFET
structure with very low
specific on-resistance and low electric field in the gate
oxide demonstrated at
PSRC/NCSU. Also covers vertcial JFETs and MESFETs with
horizontal channel.)
39. "Silicon
Carbide Switching Devices having near ideal Breakdown Voltage Capability
and Ultra-low On-state Resistance",
Patent
Number: 5,742,076, April
21, 1998.
(Power MOSFETs with high dielectric constant gate
insulators to prevent insulator
breakdown)
40. "Static
Induction Transistors having Heterojunction Gates and Methods of Forming
Same",
Patent
Number: 5,753,938, May 19,
1998.
(SiC SIT structure with Polysilicon as gate electrode.)
41. "Semiconductor
Switching Devices having Buried Gate Electrodes and Methods of Forming
Same",
Patent
Number: 5,912,497, June
15, 1999.
(Novel unipolar and bipolar device with buried gate electrode)
42. "Methods
of Forming Silicon Carbide Semiconductor Devices having Buried Silicon
Carbide Conduction Barrier Layers Therein",
Patent
Number: 5,950,076,
September 7, 1999.
(More Methods for fabricating the ACCUFET power MOSFET
structure with very
low specific on-resistance and low electric field in the
gate oxide demonstrated at
PSRC/NCSU. Also covers vertcial JFETs and MESFETs with
horizontal channel.)
43. "Power
Semiconductor Devices having improved High Frequency Switching and
Breakdown Characteristics",
Patent
Number: 5,998,833,
December 7, 1999.
(Graded doped vertical power MOSFET
[GD-MOSFET] with source electrode in deep trench for charge coupling
partially demonstrated within RFFET at Silicon Wireless)
44. "Bidirectional
Silicon Carbide Power Devices having Voltage Supporting Regions therein
for providing improved Blocking Voltage Capability",
Patent
Number: 6,023,078,
February 8, 2000.
(Monolithic AC switch implemented in SiC with MOS gate
control)
45. "Power
Semiconductor Devices that utilize Buried Insulating Regions to achieve
higher than Parallel-Plane Breakdown Voltage",
Patent
Number: 6,075,259, June
13, 2000.
(Schottky rectifiers and power MOSFETs with buried
insulators that allow for higher than parallel-plane breakdown voltage to
achieve low on-resistance and leakage current)
46. "Methods
of Forming Power Semiconductor Devices having T-shaped Gate
Electrodes",
Patent
Number: 6,303,410, October
16, 2001.
(Recessed gate MOSFET and IGBT structures using a
combination of DMOS channel and UMOS accumulation layer path to achieve
lower on-resistance with a planar process)
47. "Silicon
Carbide Power Devices having Trench-based Silicon Carbide Charge Coupling
Regions therein.",
Patent
Number: 6,313,482,
November 6, 2001.
(Low on-resistance SiC Schottky Rectifiers and power
MOSFETs based up on forming P-type charge coupling regions within trenches
formed around the N-type drift region)
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